Journal
of Crystal Growth
Volume
119, Issues 1-2 , 2 April 1992, Pages 79-93

doi:10.1016/0022-0248(92)90207-Y
Cite or link using doi
Copyright © 1992 Published by Elsevier Science B.V. All rights
reserved.
Vapor transport and crystal growth of GeSe under normal and high acceleration
H. Wiedemeier
L. L. Regel
W. Palosz
Department of Chemistry, Rensselaer Polytechnic
Institute, Troy, New York 12180-3590, USA
Space Research Institute (IKI),
Academy of Sciences of the USSR, Profsoyuznaya 84 / 32, 117810, Moscow,
USSR
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, New
York 12180-3590, USA
Available online 30 July 2002.
Abstract
Physical vapor transport experiments of GeSe in the presence of 2 atm xenon
and for a nominal temperature difference of 600°C
500°C were performed under 1g,
5g, and 10g acceleration conditions. Under high acceleration and
destabilizing conditions, the GeSe crystals are generally larger than those
under 1g, stabilizing, and up to three orders of magnitude larger in
surface area than those under 1g, destabilizing conditions. The mass
transport rates of the 5g and 10g destabilizing experiments are
considerably greater than those of the 10g, stabilizing and 1g
experiments. The observed increase in mass flux (under destabilizing conditions)
with acceleration is significantly greater than the anticipated dependence (mass
flux proportional to g1/4 for laminar, boundary-layer driven
free convection. In view of the considerable convection under high acceleration,
destabilizing conditions, the surface morphology and bulk crystallinity of the
large crystal platelets are unexpectedly good.
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