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Journal of Crystal Growth
Volume 60, Issue 1 , November 1982, Pages 57-66

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doi:10.1016/0022-0248(82)90172-5    How to cite or link using doi (opens new window) Cite or link using doi  
Copyright © 1982 Published by Elsevier Science B.V. All rights reserved.

Growth of ZnS and Zn1-xCdxS (xless, similar0.07) single crystals by iodine transport

W. PaImageosz

Institute of Physics, Warsaw Technical University, 00-662 Warsaw, Koszykowa 75, Poland

Received 28 July 1981;  revised 25 June 1982.  Available online 23 September 2002.


Abstract

Large single crystals of Zn1-xCdxS (xless, similar0.07) weighing up to 5 g were grown by iodine transport in closed ampoules in the growth temperature range of 700–1150°C. Nucleation control has been achieved in three ways: growth in ampoules of inner diameter less, similar8 mm, by using tapered ampoules, and growth on a seed. The best results were achieved when the iodine content was 1–2.5 mg/cm3 and the ampoules pulled with a rate correlated to the crystal-charge distance and the temperature gradient in crystal zone. Comparison of theoretically predicted growth rates with those experimentally obtained show that crystals of good quality grow in a diffusion-controlled system. The problem of instability effects in the growth process is discussed.



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Journal of Crystal Growth
Volume 60, Issue 1 , November 1982, Pages 57-66


 
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