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Journal of Crystal Growth
Volume 146, Issues 1-4 , 1 January 1995, Pages 42-48
Vapour Growth and Epitaxy 1994

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doi:10.1016/0022-0248(94)00483-8    How to cite or link using doi (opens new window) Cite or link using doi  
Copyright © 1995 Published by Elsevier Science B.V.

Mass flux of ZnSe by physical vapor transport

Yi-Gao Shaa, Corresponding Author Contact Information, 1, Ching-Hua Sua, 1, W. Palosza, 2, M. P. Volza, D. C. Gilliesa, F. R. Szofrana, S. L. Lehoczkya, Hao-Chieh Liub and R. F. Brebrickb

a Space Science Laboratory, NASA Marshall Space Flight Center, Huntsville, Alabama 35812, USA
b Materials Science and Metallurgy Program, Marquette University, Milwaukee, Winconsin 53233, USA

Available online 22 December 1999.


Abstract

Mass fluxes of ZnSe by physical vapor transport (PVT) were measured in the temperature range of 1050 to 1160°C using an in-situ dynamic technique. The starting materials were either baked out or distilled under vacuum to obtain near-congruently subliming compositions. Using an optical absorption technique Zn and Se2 were found to be the dominant vapor species. Partial pressures of Zn and Se2 over the starting materials at temperatures between 960 and 1140°C were obtained by measuring the optical densities of the vapor phase at the wavelengths of 2138, 3405, 3508, 3613, and 3792 Å. The amount and composition of the residual gas inside the experimental ampoules were measured after the run using a total pressure gauge. For the first time, the experimentally determined partial pressures of Zn and Se2 and the amount and composition of the residual gas were used in a one-dimensional diffusion limited analysis of the mass transport rates for a PVT system. Reasonable agreement between the experimental and theoretical results was observed.


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Corresponding Author Contact InformationCorresponding author.

1 Universities Space Research Association.

2 National Research Council.



This Document
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PDF (518 K)

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Journal of Crystal Growth
Volume 146, Issues 1-4 , 1 January 1995, Pages 42-48
Vapour Growth and Epitaxy 1994


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