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Classical semiconductor
Growth of cadmium-zinc telluride crystals by controlled seeding "contactless"
physical vapor transport
W. Palosza,
, 
, 1,
K. Graszab,
2,
D. Gilliesa
and G. Jermana
a NASA/Marshall Space Flight
Center, ES75, Huntsville, Alabama 35812, USA
b
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Received 17 January 1996; accepted 15 April 1996. ; Available
online 2 March 1999.
Bulk crystals of cadmium-zinc telluride, 23 mm in diameter and up to 45 grams
in weight were grown. Controlled seed formation procedure was used to limit the
number of grains in the crystal. Most uniform distribution of ZnTe in the
crystals was obtained using excess (Cd + Zn) pressure in the ampoule.
[1]. A. Szilagyi and M.-N. Grimbergen. J. Crystal Growth 86 (1988), p. 912. Abstract-INSPEC
[2]. J.F. Buttler, C.L. Lingren and F.P. Doty. IEEE Trans. Nucl. Sci. 39 (1992), p. 605.
[3]. K. Grasza, U. Zuzga-Grasza, A. Jedrzejczak, R.R. Galazka, J. Majewski, A. Szadkowski and E. Grodzicka. J. Crystal Growth 123 (1992), p. 519. Abstract
[4]. K. Grasza. J. Crystal Growth 146 (1995), p. 65. Abstract | Abstract + References | PDF (381 K)
[5]. W. Palosz, S.L. Lehoczky and F.R. Szofran. J. Crystal Growth 148 (1995), p. 49. SummaryPlus | Full Text + Links | PDF (418 K)
[6]. W. Palosz, F.R. Szofran and S.L. Lehoczky. J. Crystal Growth 148 (1995), p. 56. SummaryPlus | Full Text + Links | PDF (522 K)
[7]. K. Nakagawa, K. Maeda and S. Takeuchi. Appl. Phys. Lett. 34 (1979), p. 574. Full Text via CrossRef
[8]. M.-O. Ruault, O. Kaitasov, R. Triboulet, J. Crestou and M. Gasgnier. J. Crystal Growth 143 (1994), p. 40. Abstract
[9]. A. Marbeuf, R. Druilhe, R. Triboulet and G. Patriarche. J. Crystal Growth 117 (1992), p. 10. Abstract
[10]. W. Palosz et al., in preparation.
Corresponding author. Fax: +1 205 544 8762
1 NRC Senior Research Associate, currently with Universities Space Research Association.
2 Present address: Brimrose Corporation, Baltimore, Maryland 21236, USA.
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