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Journal of Crystal Growth
Volume 174, Issues 1-4 , 2 April 1997, Pages 733-739
American Crystal Growth 1996 and Vapor Growth and Epitaxy 1996

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doi:10.1016/S0022-0248(97)00053-5    How to cite or link using doi (opens new window) Cite or link using doi  
Copyright © 1997 Published by Elsevier Science B.V.

Seeded physical vapor transport of cadmium-zinc telluride crystals: growth and characterization

W. Palosza, Corresponding Author Contact Information, E-mail The Corresponding Author, 1, M. A. Georgeb, E. E. Collinsb, K. -T. Chenb, Y. Zhangb, Z. Hub and A. Burgerb

a NASA-Marshall Space Flight Center, ES75, Huntsville, Alabama 35812, USA
b Department of Physics, Fisk University, Nashville, Tennessee 37208, USA

Available online 13 May 1998.


Abstract

Crystals of Cd1 - xZnxTe with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

Author Keywords: Physics vapor transport; Cadmium-zinc telluride

PACS classification codes: 81.05.Dz; 61.72.Qq; 78.60.Ya


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Corresponding Author Contact InformationCorresponding author. Fax: + 1 205 544 8762

1 Universities Space Research Association.



This Document
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PDF (493 K)

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Journal of Crystal Growth
Volume 174, Issues 1-4 , 2 April 1997, Pages 733-739
American Crystal Growth 1996 and Vapor Growth and Epitaxy 1996


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