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Low supersaturation nucleation and "contactless" growth of photorefractive
ZnTe crystals
K. Graszaa,
,
, 1,
S. B. Trivedia,
Zengchen Yua,
S. W. Kutchera,
W. Paloszb
and G. A. Brostc
a Brimrose Corporation of America,
5020 Campbell Blvd., Baltimore, Maryland 21236-4968, USA
b Space Science Laboratory, (USRA) NASA/Marshall Space
Flight Center, Huntsville, Alabama 35812, USA
c
Rome Laboratory, 25 Electronic Parkway, Rome, New York 13441, USA
Available online 13 May 1998.
New photorefractive ZnTe crystals have been successfully grown by methods
previously applied only for the growth of CdTe single crystals [K. Grasza, J.
Crystal Growth 146 (1995) 65]. The main feature of this method lies in the novel
procedure of self-seeding in conditions of permanently low supersaturation,
growth with no contact between the crystal and ampoule wall, self-purification
and improvement of stoichiometry of the source material during growth.
Additionally, a new procedure of lowering the optimal growth temperature was
applied and an optimal growth rate with stable growth conditions was
investigated. The ZnTe crystals had resistivity exceeding 108
· cm.
Photorefractive characterization was performed using the two-beam mixing
technique, and the photorefractive gain in the range 0.63–1.5
m was measured.
Author Keywords: Crystal growth from the vapor; Lowsupersaturation nucleation; ZnTe; Photorefractive materials; Doping by transition metals
PACS classification codes: 81.05.Dz; 81.10.Bk; 61.72.Vv;
42.70.Nq
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[12]. K. Grasza, U. Zuzga-Grasza, A. Jedrzejczak, R.R. Galazka, J. Majewski, A. Szadkowski and E. Grodzicka. J. Crystal Growth 123 (1992), p. 510.
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Corresponding author: Fax: + 1 410 668 4835
1 On leave from: IFPAS, Warsaw, Poland.
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