Journal
of Crystal Growth
Volume
182, Issues 1-2 , 1 December 1997, Pages 37-44
doi:10.1016/S0022-0248(97)00337-0 
Cite or link using doi
Copyright © 1997 Published by Elsevier Science B.V.
Classical semiconductor
Characterization of cadmium-zinc telluride crystals grown by `contactless'
PVT using synchrotron white beam topography
W. Palosza,
, 1,
D. Gilliesa,
K. Graszab,
2,
H. Chungc,
B. Raghothamacharc
and M. Dudleyc
a NASA-MSFC, Huntsville, AL 35812,
USA
b IPPAS, Warsaw, Poland
c SUNY at Stony Brook, NY 11794, USA
Received 2
February 1997; accepted 2 May 1997. ; Available online 18 June 1998.
Abstract
Crystals of Cd1 - xZnxTe grown by
PVT using self-seeding `contactless' technique were characterized using
synchrotron radiation (reflection, transmission, and Laue back-reflection X-ray
topography). Crystals of low (x = 0.04) and high (up to x 
0.4) ZnTe content were
investigated. Twins and defects such as dislocations, precipitates, and slip
bands were identified. Extensive inhomogeneous strains present in some samples
were found to be generated by interaction (sticking) with the pedestal and by
composition gradients in the crystals. Large (up to about 5 mm) oval strain
fields were observed around some Te precipitates. Low angle grain boundaries
were found only in higher ZnTe content (x 
0.2) samples.
Author Keywords: PVT; Cadmium-zinc telluride; Defects
PACS classification codes: 81.05 Dz; 61.72. Ff
Corresponding author.
1
Universities Space Research Association.
2
Currently with Brimrose Corporation.
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