ScienceDirect - Solid State Communications : Combined Raman and transmission spectroscopy of ZnTe under pressure

M. D. Frogley^a^,, D. J. Dunstan^a and W. Palosz^b

^a Physics Department, Queen Mary and Westfield College, University of London, London E1 4NS, U.K.
^b NASA Marshall Flight Centre, Space Sciences Laboratory, ES75, Huntsville, AL 35812, U.S.A.

Received 29 October 1997; revised 9 March 1998; accepted 2 June 1998; by R.T. Phillips Available online 23 December 1998.

Abstract

We report measurements of both Raman and transmission spectroscopy in the same samples, under high pressure. The combination of two spectroscopies is shown to improve the reliability of the data. The phase transition is found at 940 ± 0.2 kbar. The pressure dependence of the band gap is described by a density deformation potential of 4.90 ± 0.15 eV, or a linear pressure coefficient of 10.2 ± 0.3 meV kbar^-1 at ambient pressure. We find that the shifts of the LO and TO phonon energies are linear with the shift of the band gap and therefore fit to a linear dependence on density with corresponding deformation potentials of 223 ± 3 cm^-1 (LO) and 290 ± 3 cm^-1 (TO).

Author Keywords: A. semiconductors; D. electronic band structure; D. optical properties; D. phonons; E. strain; high pressure

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