ScienceDirect - Journal of Crystal Growth : Energy gap in GaN bulk single crystal between 293 and 1237 K

Ching-Hua Su ^,^,^a, W. Palosz^b, Shen Zhu^b, S. L. Lehoczky^a, I. Grzegory^c, P. Perlin^c and T. Suski^c

^a Microgravity Science and Applications Department, NASA Marshall Space Flight Center Science Directorate, SD46, Hunstsville, AL 35812, USA
^b Universities Space Research Association, NASA/Marshall Space Flight Center, Huntsville, AL 35812, USA
^c High Pressure Center UNIPRESS, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

Received 14 September 2001; accepted 23 October 2001 Communicated by C.R. Abernathy Available online 6 December 2001.

Abstract

Optical transmission measurements were performed on GaN bulk single-crystal platelet at temperatures between 293 and 1237 K. The energy bandgaps were determined from the corresponding optical absorption spectra. The bandgaps can be fit well as a function of temperature using the Varshni expression as The shapes of the measured absorption edges were found to be dependent on the thermal treatments of the sample.

Author Keywords: B1. Nitrides; B2. Semiconducting gallium compounds

PACS classification codes: 78.40.Fy; 81.05.Ea

(6K)
Fig. 1. Absorption spectra of GaN between 809 and 1080 K. The spectra in solid curve are measured before annealing at 910 K for 80 min and the spectra in dotted line (with temperatures in parentheses) are measured after the annealing. Note that the annealing made the slopes of the subsequent runs steeper than that of the previous runs.

(5K)
Fig. 2. Energy gap of GaN as a function of temperature. Experimental data are in open squares; the solid curve is the best-fit curve from Eq. (3); the dashed curve (a) is from Ref. [12]; curve (b) from Ref. [10] and curve (c) is the linear fit from Eq. (4).

References

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Energy gap in GaN bulk single crystal between 293 and 1237 K

Abstract

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