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Journal of Crystal Growth
Volume 267, Issues 3-4 , 1 July 2004, Pages 475-483

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doi:10.1016/j.jcrysgro.2004.04.046    How to Cite or Link Using DOI (Opens New Window)  
Copyright © 2004 Elsevier B.V. All rights reserved.

Residual gas in closed systems—I: development of gas in fused silica ampoules

W. PaloszCorresponding Author Contact Information, E-mail The Corresponding Author

BAE Systems, A.S., NASA/Marshall Space Flight Center, SD46, Huntsville, AL 35812, USA

Received 15 May 2002;  accepted 13 March 2004 Communicated by K.W. Benz  Available online 2 June 2004.


Abstract

The amounts and composition of residual gases formed in empty sealed silica glass ampoules were investigated. The effect of the silica brand, outgassing and annealing conditions, system geometry, and presence of graphite were determined and discussed.

Author Keywords: A1. Degassing; A1. Residual gas; B1. Silica glass

66.30.Ny; 81.05.Kf; 81.20.Ym


Article Outline

1. Introduction
2. Experimental
3. Results
3.1. The effects of the room temperature outgassing and presence of carbon
3.2. Effect of the surface-area-to-volume ratio
3.3. Effect of the outgassing temperature and time
3.4. Effect of the pressure during outgassing
3.5. Other effects
4. Summary and conclusions
Acknowledgements
References



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Fig. 1. Experimental system.

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Fig. 2. Development of gas in ampoules outgassed for 2 h at RT (B), for 16 h at 1000°C (A), and in the presence of carbon (C): (a) GE214 glass; and (b) HSQ300 glass.

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Fig. 3. Experimental and calculated change of hydrogen pressure with time in HSQ300 ampoules. Upper curves, A/V=0.92 cm2/cm3, outgassing at RT for 2 h (Fig. 2b, B); lower curves, A/V=2.7 cm2/cm3, outgassing at 1000°C for 16 h (Fig. 4b, B).

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Fig. 4. Development of gas in ampoules of different surface-area-to-volume ratios: (a) GE214 glass; and (b) HSQ300 glass.

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Fig. 5. Development of gas in ampoules outgassed at different temperatures and for a different time: (a) GE214 glass; and (b) HSQ300 glass.

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Fig. 6. Development of gas in ampoules outgassed under different ambient pressures.

References

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Corresponding Author Contact InformationCorresponding author. Tel.: +1-256-544-1272; fax: +1-256-544-6762



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Journal of Crystal Growth
Volume 267, Issues 3-4 , 1 July 2004, Pages 475-483


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