Growth of MgO by Metal-Organic Molecular Beam Epitaxy
F. Niu, B.H. Hoerman, B.W.Wessels
Proc. Mat. Res. Soc. Fall Meeting. Boston. Vol. 606 (1999).
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Absract:
In recent years there has been increasing interest in the deposition of ultra-thin film oxide insulators. In the present work, MgO thin films were deposited on (100) Si substartes by metal-organic molecular beam epitaxy (MOMBE). Magnesium beta-diketonates were used as the precursors and an oxygen Rf plasma was used as the oxidant. The typical growth temperature was 700C. Films from 20 to 500 nm were grown at a deposition rate of 0.2 to 0.8 nm/min. Compositional analysis by EDAX and microstructural characterization by TEM indicate that the films are both stoichiometric and phase-pure MgO. The films were polycrystalline. Scanning Auger microprobe analysis indicated no carbon incorporation in the films. Atomic force microscopy indicated that the films had a smooth surface morphology. The index of refraction was 1.71.