Metal-organic molecular beam epitaxy of MgO on Si
F. Niu, B. H. Hoerman and B. W. Wessels
Materials Research Society Spring Meeting Session L: Paper 6.3 San Francisco, CA. Apr. 2000.
Link To MRS Fall 2000 Meeting Web Site
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Abstract:
Epitaxial MgO lms have been grown on single crystal Si (001) substrates by metal-organic molecular beam epitaxy using a solid precursor, magnesium beta-diketonate and activated oxygen. The process involved the growth of a thin epitaxial interlayer followed by deposition of MgO at 800 C. The overlayer was epitaxial with a MgO(001)//Si(001) , MgO[110]//Si[110] orientation. The structure of the interlayer and oxide layer was characterized by RHEED and high-resolution transmission electron microscopy. The composition was determined by Auger electron spectroscopy and Fourier transform infra-red spectroscopy. The formation of the interlayer and MgO was studied with RHEED.